SAMSUNG 990 EVO Plus SSD 2TB, PCIe 4.0 x4 M.2 2280, Speeds Up-to 7,250MB/s
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Samsung 990 EVO Plus 2TB PCIe 4.0 / 5.0 NVMe M.2 SSD
Unleash breakthrough storage performance engineered with Samsung's 5nm in-house Piccolo controller and 8th-Gen V-NAND TLC. Delivering speeds up to 7,250 MB/s sequential read and up to 73% higher power efficiency with hybrid PCIe 4.0 x4 and PCIe 5.0 x2 compatibility.
Zero Asset Streaming Lag in Modern AAA Blockbusters
Pushing 1,000,000 IOPS and 7,250 MB/s bandwidth, games load near-instantaneously. Optimized for Microsoft DirectStorage, high-resolution textures stream straight into GPU VRAM without CPU paging stutter.
73% Better MB/s-Per-Watt Energy Efficiency
Built on a state-of-the-art 5nm process with intelligent Host Memory Buffer (HMB) technology, it transfers 4K/8K video timelines and massive file archives while sipping power and keeping laptop batteries running longer.
Engineered for Sustained Peak Bandwidth
Up to 7,250 MB/s Blazing Sequential Speed
Delivering up to 45% faster sequential read performance than the preceding 990 EVO, saving precious seconds during large game updates and heavy 4K exports.
73% Higher Energy Efficiency per Watt
Advanced in-house 5nm Piccolo controller maximizes every milliwatt of power, ideal for both desktop builds and extending laptop battery runtimes.
Hybrid PCIe 4.0 x4 & PCIe 5.0 x2 Interface
Designed to operate flexibly across PCIe 4.0 x4 motherboards as well as newer PCIe 5.0 x2 slots without throttling or bandwidth bottlenecks.
Samsung Magician 8.0 & Dynamic Thermal Guard
Smart thermal control algorithms and a nickel-coated controller label dissipate heat rapidly while Magician provides real-time drive diagnostics and firmware tuning.
Storage Speed & Bandwidth Comparison Index
Sequential Read Performance relative to modern PCIe NVMe standards
Recommended Hardware Synergy
Samsung 990 EVO Plus 2TB Technical Datasheet
| Manufacturer & Series | Samsung 990 EVO Plus Series |
|---|---|
| Internal Model SKU | MZ-V9S2T0BW / MZ-V9S2T0B/AM |
| Storage Capacity | 2,000 GB (2TB) |
| Form Factor | M.2 2280 Single-Sided |
| Interface & Protocol | PCIe® Gen 4.0 x4 / PCIe® Gen 5.0 x2, NVMe™ 2.0 |
| Max Sequential Read | Up to 7,250 MB/s |
| Max Sequential Write | Up to 6,300 MB/s |
| Random 4KB Read | Up to 1,000,000 IOPS (QD32) |
| Random 4KB Write | Up to 1,350,000 IOPS (QD32) |
| Controller | Samsung In-House 5nm Piccolo Controller |
| NAND Flash Memory | Samsung 8th-Generation V-NAND TLC |
| DRAM / Buffer | Host Memory Buffer (HMB) Architecture |
| Endurance (TBW) | 1,200 Terabytes Written (TBW) |
| Official Warranty | 5-Year Official Samsung Authorized Warranty in Egypt |
